^>.mi-(lond\ji(iloi l/^ioducts., unc. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SC5003 description ? collector-base breakdown voltage- : v(br)cbo= 1500v(min) ? high switching speed ? built-in damper diode applications ? designed for display horizontal deflection output,switching regulator and general purpose applications. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic i cm ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous collector power dissipation @tc=25'c junction temperature storage temperature value 1500 800 6 7 14 3.5 80 150 -55-150 unit v v v a a a w c "c b 2 "^0 l~~*aa^-l 1 pin l.base 2. collector 3. emitter , ? ,, to-3pml package 1 a i k t 1 i q r h t ', - * c *- u i ,' _. , ', , . ~~ z 'f g -*--j ???? r ? -^ dim a b c d f g h j k l n u r s u y z mm win 19.90 15.90 5.50 0.90 3.30 2.90 5.90 0.595 22.30 1.90 10.80 4.90 3.75 3.20 9.90 4,70 1.90 max 20.10 16.10 5.70 1.10 3.50 3,10 6.10 0.605 22.50 2.10 11.00 5.10 3.96 3.40 10.10 4,90 2,10 * n.i semi-conductors reserves the right to change test conditions, parameter limits and package dimensions uithout notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. i louever. n.i semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i scmi-conduetois encourages customers to verily that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor 2SC5003 electrical characteristics tj=25'c unless otherwise specified symbol v(br)ebo vce(sat) vee(sat) icbo iceo hpe-1 hfe-2 cob fr parameter emitter-base breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current dc current gain dc current gain output capacitance current-gain ? bandwidth product conditions ie= 300ma; lc= 0 ic=5a;ib=1.2a ic=5a;ib=1.2a vcb= 1200v; ie= 0 vcb= 1500v; ie= 0 vce= 800v; ib= 0 lc=1a;vce=5v lc= 5a; vce= 5v ie=0; vcb=10v;f=1mhz ie=-0.5a; vce=12v min 6 8 4 typ. 100 4 max 5.0 1.5 0.1 1.0 1.0 9 unit v v v ma ma pf mhz switching times tstg tf storage time fall time lc= 4a; lbi= 0.8a; ib2=-1.6a; vcc= 200v; rl= 50 q 4.0 0.2 w s u s
|
